Russian scientists have developed a new technology to create high-performance integrated circuits

Photo source:canalblog.com

Employees REC "Quantum devices and nanotechnology" LPI, MIET developed technology of high-speed electronic component base of a new generation on the basis of quantum effects of resonant tunneling. It is a technology monolithic planar integration of resonant tunneling diodes, FETs and Schottky diodes. It can significantly improve performance by reducing the number of active elements of digital integrated circuits and is fully compatible with standard technology gallium arsenide integrated circuits.

The history of solid-state electronics began with the invention of the transistor in 1947. Since the development of the electronics goes towards improving the performance and

Continue reading Russian scientists have developed a new technology to create high-performance integrated circuits

Russian scientists have developed a new technology to create high-performance integrated circuits

 Photo source:canalblog.com

Employees REC "Quantum devices and nanotechnology" LPI, MIET developed technology of high-speed electronic component base of a new generation on the basis of quantum effects of resonant tunneling. It is a technology monolithic planar integration of resonant tunneling diodes, FETs and Schottky diodes. It can significantly improve performance by reducing the number of active elements of digital integrated circuits and is fully compatible with standard technology gallium arsenide integrated circuits.

The history of solid-state electronics began with the invention of the transistor in 1947. Since the development of the electronics goes towards improving the performance and

Continue reading Russian scientists have developed a new technology to create high-performance integrated circuits

SQL - 16 | 0,579 сек. | 6.6 МБ