The head of the Voronezh Region Alexei Gordeev acquainted with the work of the flagships of the domestic microelectronics — JSC "Voronezh plant semiconductor-Micron" and JSC "Voronezh Semiconductor Equipment Plant — Building".
On"VSP-Mikron" Head of the region examined production facilities: the shop crystal production areas of functional and visual inspection products. The company was founded in 2000 on the basis of the crystal produced by NPO "Electronics". The main activity of JSC "VSP-Mikron" — design and production of crystals of power discrete components, as well as various types of digital and analog integrated circuits for customers in Russia and abroad.
The volume of production of JSC "VSP-Mikron" in 2012 amounted to 727.2 million rubles. Two production lines provide a release of more than 23,000 wafers per month. Particular attention is paid to the improvement of the design and technological base. Due to the modernization and technical re-equipment of planned capacity expansion.
JSC "VSP-Build", which then visited Alexei Gordeev, is one of the nation's largest developers and manufacturers of electronic components for manufacturing enterprises of electronic products, communications equipment and the essential equipment of special purpose. Manufactured microelectronic semiconductor products and plant supplies nearly 500 enterprises in Russia and the CIS countries.
The head of the region examined here is the center of design, a separation plates on crystals, the new assembly facility, a site inspection operation, and viewed an exhibition of the finished product. Chairman of the Board of Directors of JSC "VSP-Build" Sergei Tsibin as an example of the products displayed one of the boards, where one square decimeter placed 20 million transistors.
General Director Boris Ryazancev said that the volume of production in 2012 amounted to 1.08 billion rubles. And, in addition to production of serial products (microelectronic devices for special purposes, a broad product range of power electronics, high-power n-channel field-effect transistors, high-power RF and microwave transistors, etc.), the plant develops new areas of activity, such as the development and production of high-power power sources.