The company Crocus Technology, one of the developers of magnetoresistive memory, today announced an agreement on technological cooperation and cross-licensing patents by IBM. Patent agreement that provides mutual access to patents that will enable companies to conduct joint development in the field of magnetic memory, and use the results in their semiconductor products.
In the framework of the signed agreement of Technology Crocus and IBM will be able to combine the benefits of Crocus MLU (Magnetic-Logic-Unit — magnetic logic gate) and the development of IBM's magnetoresistive random access memory (MRAM).
In May of this year, RUSNANO has invested in Crocus Technology $ 300 million in exchange for the construction of a Russian plant to produce chips MRAM. At this plant Crocus and IBM will be releasing a joint production.
"The agreement on the joint development and patent license confirms the long-term commitment to the IBM Innovation through collaboration — said William Gallagher, senior manager for quantum computing and magnetic storage, IBM. — We look forward to fruitful cooperation with Crocus in the development of advanced magnetic semiconductor technologies that can increase the functionality and improve the performance of semiconductor products. "
Technology MLU, first introduced by Crocus in June 2011, is based on the architecture of self-addressing. It is a development of previously developed technology Crocus state change memory cell using a local heating (TAS — thermally assisted switching) and allows for the first time to realize MRAM means not only storage but also logical processing of information. These innovations are expanding the market for magnetic technologies Crocus, opening up new possibilities for their use in areas such as data storage with high density, secure e-commerce, telecommunications, data processing in high-bandwidth networks, as well as high-temperature automotive and industrial electronics.
The development of IBM's MRAM have advantages over competing memory technologies — they have low power consumption, high speed, unlimited read and write cycles, as well as non-volatility — saving data when power is removed. The potential of MRAM will create computers with instant downloading, and mobile devices with low power consumption.