Plant Micron basic chair opened the functional nano-electronics in MIPT


Moscow, October 20, 2011 — JSC "Mikron", leading enterprise business line Microelectronics, the largest in Russia and the CIS developer, manufacturer and exporter of microelectronics, creates a basic functional nano-electronics department in the Faculty of Physical and Quantum Electronics at the National Research University "Moscow Institute of Physics and Technology (MIPT). " In September 2011, between the company and the host university signed a contract.

The department prepares highly skilled professionals able to learn, develop and deploy advanced technologies in the field of nano-and microelectronics. The department will prepare bachelors in "Physics of Quantum Electronics" and masters in "physical nanoelektropriborov technology." Are currently in the recruitment of students.

As part of the creation of the Department of 7 October 2011 on the "Micron" working meeting of chief designer of "Mikron" Academician Gennady Jakovljevic Krasnikova with a delegation of employees MIPT, which included the rector of MIPT corresponding member of the Russian Academy of Sciences N.N.Kudryavtsev , Dean of the Faculty of Physical and Quantum Electronics tf-Mathematical Sciences, Professor PA Todua, faculty and graduate students. Leading specialists of the company briefed the delegation MIPT with the main directions of scientific work and production. The meeting participants discussed the prospects of cooperation and action plan to ensure the activities of the new department.

In addition to cooperation with the MIPT "Micron" created and coordinates the work of the base of the Department "Submicron VLSI technology" at the National Research University "MIET" (Moscow Institute of Electronic Technology), the head of which is the GY KRASNIKOV.

"The development of domestic microelectronics requires the involvement of not only financial resources, but also highly qualified professionals, primarily scientific and engineering personnel. Therefore, co-operation and partnership "Micron» c leading technical universities, such as MIET and MIPT, acquire key to the development of the tech enterprises producing nano-electronics, — said G. KRASNIKOV. — Experience "Micron" showed that business investment in human resources is always justified. In our company created a system of training and retraining that allows young professionals to gain valuable hands-on experience, learn new advanced technology and, ultimately, contribute to achieving the strategic goal of "Micron" — dominate the domestic market and positioning in the local segments of the world. "

"Microelectronics" — The largest in Russia and the CIS producer and exporter of microelectronics. In the business segment of "Microelectronics" includes enterprises in Russia: JSC "Mikron", JSC "Scientific-Research Institute of Molecular Electronics", JSC "VSP-Mikron", LLC "SST", JSC "NIITM", LLC "SITRONICS-Nano", JSC "Sitronics NT", LLC "Sitronics Microdesign" in China: «Cosmos Wealth» (Hong Kong), chip encapsulation plant (Shenzhen) and others.

JSC "Mikron", company with 47 years of history, is the largest in terms of sales in Russia and the CIS producer and exporter of microelectronics. JSC "Mikron" is part of "Sitronics" where is the parent enterprise business line, "Microelectronics". Revenue trends in 2010 amounted to 255.4 million U.S. dollars. Revenue growth relative to 2009 was 23%. The company delivers to customers in more than 400 Russian and 100 abroad, "Micron" has a strong science and engineering school develops its own R & D center, which employs about 400 people. The company on an ongoing basis with more than 60 research organizations. The cost of R & D is about 15% of revenue. The company employed 1,635 employees. In clean rooms "Micron" is a modern manufacturing integrated circuits with topological level of 180 nm, and the basic technology of the EEPROM on a 200 mm diameter wafers. The enterprise has a joint project with the State Corporation "RUSNANO" to establish on the basis of "Micron" production of integrated circuits based on nanoelectronic technology with design rules of 90 nm on 200 mm wafers.

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